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IPB120N03S4L03ATMA1

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IPB120N03S4L03ATMA1

Manufacturer's Part #
 IPB120N03S4L03ATMA1
Manufacturer
 Infineon Technologies
Categories
 Discrete Semiconductor Products
Sub-Categories
 Transistors - FETs, MOSFETs - Single
Series
 DSH
ECAD Model
 componentsearchengine
Description
 MOSFET N-CH 30V 120A D2PAK
Datasheet
 pdfIPB120N03S4L03ATMA1.pdf

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Product Parameter

TypeDescription
SeriesAutomotive, AEC-Q101, OptiMOS?
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 25 V
Power Dissipation (Max)79W (Tc)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  
PackageTape & Reel (TR)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.2V @ 40μA
Vgs (Max)±16V
FET Feature-
Operating Temperature-55°C ~ 175°C (TJ)
Supplier Device PackagePG-TO263-3
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Shipping Rate

We ship orders once a day around 5 p.m., except Sunday. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

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Payment

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